Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe₂

Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with onset of nearly 2Eg,interpretation the CM effect optical approach remains unresolved owing to complexity many-body electron-hole pairs. We demonstrate through simple photocurrent measurements by fabricating dual-gate P-N junction a MoTe2 film on transparent substrate. Electrons and holes were efficiently extracted eliminating Schottky barriers in contact minimizing multiple reflections. The was elevated proportionately excitation energy. boosted quantum efficiency confirms pair generation >2Eg, consistent results approach, pushing solar cell beyond Shockley-Queisser limit.